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| STF16NK60Z STP16NK60Z, STW16NK60Z N-channel 600 V, 038 14 A, TO-220, TO-220FP, TO-247 , Zener-protected SuperMESHTM Power MOSFET Features Type STF16NK60Z STP16NK60Z STW16NK60Z VDSS 600 V 600 V 600 V RDS(on) max < 0.42 < 0.42 ID Pw 40 W 190 W 190 W TO-220FP 3 1 2 1 2 3 < 0.42 14 A(1) 14 A 14 A TO-220 1. Limited by package. 100% avalanche tested Extremely high dv/dt capability Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatability Figure 1. Internal schematic diagram D(2) 1 2 3 TO-247 Application Switching applications Description The new SuperMESHTM series of Power MOSFETS is the result of further design improvements on ST's well-established stripbased PowerMESHTM layout. In addition to significantly lower on-resistance, the device offers superior dv/dt capability to ensure optimal performance even in the most demanding applications. The SuperMESHTM devices further complement an already broad range of innovative high voltage MOSFETs, which includes the revolutionary MDmeshTM products. Table 1. Device summary Marking F16NK60Z P16NK60Z W16NK60Z Package TO-220FP TO-220 TO-247 Tube Packaging G(1) S(3) AM01476v1 Order codes STF16NK60Z STP16NK60Z STW16NK60Z December 2009 Doc ID 10249 Rev 5 1/15 www.st.com 15 Contents STF16NK60Z, STP16NK60Z, STW16NK60Z Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ........................ 6 3 4 5 Test circuits .............................................. 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2/15 Doc ID 10249 Rev 5 STF16NK60Z, STP16NK60Z, STW16NK60Z Electrical ratings 1 Electrical ratings Table 2. Symbol VDS VGS ID ID IDM (2) Absolute maximum ratings Value Parameter TO-220 / TO-247 Drain-source voltage (VGS = 0) Gate- source voltage Drain current (continuous) at TC = 25 C Drain current (continuous) at TC = 100 C Drain current (pulsed) Total dissipation at TC = 25 C Derating factor 14 8.8 56 190 1.51 6000 4.5 2500 -55 to 150 150 600 30 14 (1) 8.8 (1) Unit TO-220FP V V A A A W W/C V V/ns V C C 56(1) 40 PTOT VESD(G-S) dv/dt (3) VISO Tstg Tj Gate source ESD(HBM-C = 100 pF, R = 1.5 k) Peak diode recovery voltage slope Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC = 25 C) Storage temperature Max. operating junction temperature 1. Limited by package 2. Pulse width limited by safe operating area 3. ISD 14 A, di/dt 200 A/s, VDD = 80% V(BR)DSS Table 3. Symbol Rthj-case Rthj-amb Tl Thermal data Parameter Thermal resistance junction-case max Thermal resistance junction-ambient max Maximum lead temperature for soldering purpose 62.5 TO-220 TO-247 TO-220FP 3.1 50 300 62.5 Unit C/W C/W C 0.66 Table 4. Symbol IAR EAS Avalanche characteristics Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) Single pulse avalanche energy (starting Tj = 25 C, ID = IAR, VDD = 50 V) Max value 14 360 Unit A mJ Doc ID 10249 Rev 5 3/15 Electrical characteristics STF16NK60Z, STP16NK60Z, STW16NK60Z 2 Electrical characteristics (TC = 25 C unless otherwise specified) Table 5. Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) On /off states Parameter Drain-source breakdown voltage Test conditions ID = 1 mA, VGS = 0 Min. 620 1 50 10 3 3.75 0.38 4.5 0.42 Typ. Max. Unit V A A A V VDS = Max rating Zero gate voltage drain current (VGS = 0) VDS = Max rating, TC=125 C Gate-body leakage current (VDS = 0) VGS = 20 V Gate threshold voltage VDS = VGS, ID = 50 A Static drain-source on resistance VGS = 10 V, ID = 7 A Table 6. Symbol Ciss Coss Crss COSS eq(1) Qg Qgs Qgd Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Equivalent output capacitance Total gate charge Gate-source charge Gate-drain charge Test conditions Min. Typ. 2650 285 62 158 86 17 46 Max. Unit pF pF pF pF nC nC nC VDS = 25 V, f = 1 MHz, VGS = 0 - - VGS = 0, VDS = 0 to 480 V VDD = 480 V, ID = 14 A, VGS = 10 V (see Figure 19) - - - - 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Table 7. Symbol td(on) tr td(off) tf Switching times Parameter Turn-on delay time Rise time Turn-off-delay time Fall time Test conditions VDD = 480 V, ID = 14 A, RG = 4.7 , VGS = 10 V (see Figure 18) Min. Typ. 30 25 70 15 Max Unit ns ns ns ns - - 4/15 Doc ID 10249 Rev 5 STF16NK60Z, STP16NK60Z, STW16NK60Z Electrical characteristics Table 8. Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM trr Qrr IRRM Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 14 A, VGS = 0 ISD = 14 A, di/dt = 100 A/s VDD = 100 V (see Figure 23) ISD = 14 A, di/dt = 100 A/s VDD = 100 V, Tj = 150 C (see Figure 23) Test conditions Min. 490 5.4 22 585 7 24 Typ. Max. Unit 14 56 1.6 A A V ns nC A ns nC A - 1. Pulse width limited by safe operating area 2. Pulsed: Pulse duration = 300 s, duty cycle 1.5% Table 9. Symbol BVGSO Gate-source Zener diode Parameter Gate-source breakdown voltage Test conditions Igs= 1 mA (open drain) Min 30 Typ Max Unit V The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage of external components. Doc ID 10249 Rev 5 5/15 Electrical characteristics STF16NK60Z, STP16NK60Z, STW16NK60Z 2.1 Figure 2. Electrical characteristics (curves) Safe operating area for TO-220 Figure 3. Thermal impedance for TO-220 Figure 4. ID (A) Safe operating area for TO-220FP AM01498v1 Figure 5. Thermal impedance for TO-220FP O p lim era ite tio dn by in m thi ax s a R re D a on ) is 10 1 10s 100s 1ms 10ms 10 0 10 -1 10-2 10-1 10 0 S( 10 1 10 2 VDS(V) Figure 6. Safe operating area for TO-247 Figure 7. Thermal impedance for TO-247 6/15 Doc ID 10249 Rev 5 STF16NK60Z, STP16NK60Z, STW16NK60Z Figure 8. Output characteristics Figure 9. Electrical characteristics Transfer characteristics Figure 10. Normalized BVDSS vs temperature Figure 11. Static drain-source on resistance Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations Doc ID 10249 Rev 5 7/15 Electrical characteristics Figure 14. Normalized gate threshold voltage vs temperature STF16NK60Z, STP16NK60Z, STW16NK60Z Figure 15. Normalized on resistance vs temperature Figure 16. Source-drain diode forward characteristics Figure 17. Maximum avalanche energy vs temperature 8/15 Doc ID 10249 Rev 5 STF16NK60Z, STP16NK60Z, STW16NK60Z Test circuits 3 Test circuits Figure 19. Gate charge test circuit VDD 12V 2200 Figure 18. Switching times test circuit for resistive load 47k 100nF 1k RL VGS VD RG PW D.U.T. F 3.3 F VDD Vi=20V=VGMAX 2200 F IG=CONST 100 2.7k 47k PW 1k AM01469v1 D.U.T. VG AM01468v1 Figure 20. Test circuit for inductive load Figure 21. Unclamped inductive load test switching and diode recovery times circuit A D G S B 25 D.U.T. A FAST DIODE B A L=100H B D G 3.3 F 1000 F L VD 2200 F 3.3 F VDD VDD ID RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 22. Unclamped inductive waveform V(BR)DSS VD Figure 23. Switching time waveform ton tdon tr toff tdoff tf 90% IDM 90% 10% ID VDD VDD 0 10% VDS 90% VGS AM01472v1 0 10% AM01473v1 Doc ID 10249 Rev 5 9/15 Package mechanical data STF16NK60Z, STP16NK60Z, STW16NK60Z 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 10/15 Doc ID 10249 Rev 5 STF16NK60Z, STP16NK60Z, STW16NK60Z Package mechanical data Table 10. Dim. TO-220FP mechanical data mm Min. Typ. Max. 4.6 2.7 2.75 0.7 1 1.70 1.70 5.2 2.7 10.4 16 28.6 9.8 2.9 15.9 9 3 30.6 10.6 3.6 16.4 9.3 3.2 A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 Dia 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 Figure 24. TO-220FP drawing L7 E A B D Dia L6 L5 F1 F2 F H G1 G L2 L3 L4 7012510_Rev_K Doc ID 10249 Rev 5 11/15 Package mechanical data STF16NK60Z, STP16NK60Z, STW16NK60Z TO-220 type A mechanical data mm Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 P Q 4.40 0.61 1.14 0.48 15.25 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 Typ Max 4.60 0.88 1.70 0.70 15.75 0015988_Rev_S 12/15 Doc ID 10249 Rev 5 STF16NK60Z, STP16NK60Z, STW16NK60Z Package mechanical data TO-247 Mechanical data mm. Min. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 14.80 4.30 Typ Max. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 Dim. A A1 b b1 b2 c D E e L L1 L2 oP oR S Doc ID 10249 Rev 5 13/15 Revision history STF16NK60Z, STP16NK60Z, STW16NK60Z 5 Revision history Table 11. Date 11-Sep-2006 07-Jun-2007 04-Dec-2009 Document revision history Revision 3 4 5 Added statement for ECOPACK(R). Updated packages mechanical data. Changes 14/15 Doc ID 10249 Rev 5 STF16NK60Z, STP16NK60Z, STW16NK60Z Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2009 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com Doc ID 10249 Rev 5 15/15 |
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